irfp150n hexfet ? power mosfet fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-247 package is preferred for commercial- industrial applications where higher power levels preclude the use of to-220 devices. the to-247 is similar but superior to the earlier to-218 package because of its isolated mounting hole. s d g v dss = 100v r ds(on) = 0.036 w i d = 42a l advanced process technology l dynamic dv/dt rating l 175c operating temperature l fast switching l fully avalanche rated description to-247ac parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 42 i d @ t c = 100c continuous drain current, v gs @ 10v 30 a i dm pulsed drain current ?? 140 p d @t c = 25c power dissipation 160 w linear derating factor 1.1 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ?? 420 mj i ar avalanche current ?? 22 a e ar repetitive avalanche energy ? 16 mj dv/dt peak diode recovery dv/dt ?? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) absolute maximum ratings parameter typ. max. units r q jc junction-to-caseCCC0.95 r q cs case-to-sink, flat, greased surface0.24CCCc/w r q j a junction-to-ambientCCC40 thermal resistance
irfp150n 2 www.irf.com parametermin.typ.max.units conditions v (br)dss drain-to-source breakdown voltage100??????vv gs = 0v, i d = 250a d v (br)dss /d t j breakdown voltage temp. coefficient???0.11??? v/creference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance??????0.036w v gs = 10v, i d = 23a ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 14 ??? ??? s v ds = 25v, i d = 22a ? ??? ??? 25 a v ds = 100v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 110 i d = 22a q gs gate-to-source charge ??? ??? 15 nc v ds = 80v q gd gate-to-drain ("miller") charge ??? ??? 58 v gs = 10v, see fig. 6 and 13 ?? t d(on) turn-on delay time ??? 11 ??? v dd = 50v t r rise time ??? 56 ??? i d = 22a t d(off) turn-off delay time ??? 45 ??? r g = 3.6 w t f fall time ??? 40 ??? r d = 2.9 w , see fig. 10 ?? between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 1900 ??? v gs = 0v c oss output capacitance ??? 450 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 230 ??? ? = 1.0mhz, see fig. 5 ? nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns 5.0 i dss drain-to-source leakage current 13 ? starting t j = 25c, l = 1.7mh r g = 25 w , i as = 22a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) notes: ? i sd 22a, di/dt 180a/s, v dd v (br)dss , t j 175c ? pulse width 300s; duty cycle 2%. ? uses irf1310n data and test conditions parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ?? ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s =23a, v gs = 0v ? t rr reverse recovery time ??? 180 270 ns t j = 25c, i f = 22a q rr reverse recoverycharge ??? 1.2 1.8 c di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics a 42 140 s d g
irfp150n www.irf.com 3 fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics 1 10 100 1000 0.1 1 10 100 20us pulse width t = 25 c j o top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20us pulse width t = 175 c j o top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j o t = 175 c j o -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) o v = i = gs d 10v 36a
irfp150n 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 500 1000 1500 2000 2500 3000 3500 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 20 40 60 80 100 120 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 22a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c o o v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
irfp150n www.irf.com 5 fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irfp150n 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as o i d top bottom 9.0a 16a 22a
irfp150n www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
irfp150n 8 www.irf.com part marking information to-247ac package outline to-247ac outline dimensions are shown in millimeters (inches) lead assignments notes: - d - 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) 3.65 (.143) 3.55 (.140) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 1 2 3 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-247-ac. 1 - gate 2 - drain 3 - source 4 - drain international rectifier log o assembly lot code example : this is an irfpe30 w ith a ssembly lot code 3a1q part number date code (yyw w ) yy = year ww week 3a1q 9302 irfpe30 a
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